NE32584C Hetero Junction Field Effect Transistor

Tuote SNC23280. NE32584C Hetero Junction Field Effect Transistor. C to Ku band super low noise amplifier N-Channel Hj-FET. Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz.

BSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS –3.0 V
Drain Current ID IDSS mA
Gate Current IG 100 PA
Total Power Dissipation Ptot 165 mW
Channel Temperature Tch 150 qC
Storage Temperature Tstg –65 to +150 qC

RECOMMENDED OPERATING CONDITION (TA = 25 qC)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit
Drain to Source Voltage VDS 23V
Drain Current ID 10 20 mA
Input Power Pin 0 dBm